Abstract
The diffusion of phosphorus into silicon out of gaseous P2O5 is rated by a glassy surface layer of (SiO2) n· P205. The dependence of glass composition and sheet resistance of the diffused layer on P2O5-concentration in the reaction zone is examined at constant diffusion time and temperature. There is no simple linear relation. The results can be explained by a discussion of the phase diagram of SiO2—P2O5. Even at low doping levels far below the solubility limit only part of all phosphorus in the silicon contributes to electrical conduction. The relative part of inactive phosphorus increases with decreasing resistivity.
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