Abstract
This paper presents the device performance of InP MOSFETs with a single ZrO2 gate dielectric and with stacked gate dielectrics using various interfacial layers between ZrO2 and InP substrate, including Al2O3, HfAlOx, and ZrAlOx. Of the gate stacks studied, Al2O3/ZrO2, HfAlOx/ZrO2, and ZrAlOx/ZrO2 bilayer gate dielectrics exhibit lower subthreshold swing, higher drive current and channel mobility compared to a single ZrO2 under similar equivalent oxide thickness of 1.2nm. In the reliability, InP MOSFETs with the bilayer gate stacks are more robust compared to that with a single ZrO2 under similar electrical field stress for 500s. These improvements are attributed to a better interface quality between the bilayer gate stacks and InP substrate, which has been confirmed by frequency dispersion and interface state density measurements.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
