Abstract
Epitaxial layers of ZnTe and CdTe: ZnTe superlattices have been grown by MOVPE on {100} and {⦶111}B GaAs substrates at temperatures down to 300°C using di-isopropyl telluride. In contrast to growth at 410°C using di-ethyl telluride, these layers exhibit excellent morphology. Using RHEED, however, it has been possible to show that the morphology remains better on the {⦶111}B. ZnTe has also been grown on {100} GaSb.
Published Version
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