Abstract
ZnSSe substrates transparent for ZnSe QW emissions were used for the growth of ZnSe/ZnMgSSe structures. The FWHM of X-ray rocking curve of a substrate with a sulfur content of 8% was 38 arcsec. Effectively emitting ZnSe/ZnMgSSe QW structures of different specifications were grown by LP MOVPE. It was confirmed that etching the substrate surface in diluted HCl before growth improves the radiative properties of the grown structures due to a removal of oxide layers. For a QW structure with well thicknesses of 4 nm, 6 nm and 12 nm, well-resolved peaks of all QWs were observed in the low temperature PL spectra.
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