Abstract
The MOVPE growth of blue-emitting devices based on ZnSe is mainly hindered by the lack of sufficient p-type doping. We have used the Sb precursor trisdimethylaminoantimony (TDMASb) for antimony doping of ZnSe in our MOVPE growth process. ZnSe : Sb layers showing p-type conductivity as well as ZnSe : Sb/ZnSe : Cl p–n junction diodes were deposited on p-type GaAs : Zn substrates. The diode structures show blue electroluminescence under forward bias. Photoluminescence at T PL=16 K and electroluminescence in the temperature range of T EL=16–300 K were measured.
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