Abstract
Epitaxial ZnSe films were grown by metal organic chemical vapor deposition (MOCVD) method assisted with hydrogen radicals generated by hollow cathode plasma. The amount of hydrogen (H) radicals generated in a hollow cathode plasma (HCP) was twice than that in an inductively coupled plasma (ICP), which was measured by NO2 gas titration technique. The growth rate of the ZnSe film was increased by a factor of three when H-radicals generated by a r.f.-ICP are introduced into the substrate region. On the other hand, the growth rate was increased by a factor of ten using H-radicals generated by HCP in comparison with normal growth without using H-radicals. The X-ray diffraction studies showed the quality of ZnSe films grown by HCP was almost same to the films grown by ICP. The HCP is very useful H-radical generator for a radical assisted MOCVD growth.
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