Abstract
In this study, low pressure metal-organic chemical vapour deposition was used, accompanied by 488 nm argon ion laser irradiation, to study the growth of ZnSe epilayers. With laser irradiation, a faster growth rate was obtained and the crystallinity was improved. Better optical properties appeared when the growth temperature was below 400°C. The influence of the laser power density was also examined between 0 and 0.2 W/cm −2 at a growth temperature of 350°C. The growth rate and quality were improved with increasing laser power density.
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