Abstract
ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), atomic force microscopy, and transmission electron microscopy. An atomically flat and low defect homoepitaxial buffer GaAs(110) was grown with high V/III ratio (⩾150) and at low growth temperature (∼430 °C). At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect ZnSe films (defect density ⩽105 cm−2) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
