Abstract
A simple method is suggested to obtain reflection high-energy electron diffraction (RHEED) oscillation of InAs layer grown on a GaAs substrate. The growth process of InAs epilayer as well as the relation between the growth mode and V/III flux ratios are studied by RHEED oscillation. We find that RHEED intensity oscillation exists in the range of flux ratios of V/III from 5.3 to 7.3 under the In-rich conditions and from 10.5 to 22.7 under the As-rich conditions. A step flow growth mode occurs in the range of critical flux ratios of V/III from 7.3 to 10.5. A rough surface is observed at higher flux ratios of V/III under In-rich conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
