Abstract
Highly conductive p-type ZnSe layers have been grown by molecular beam epitaxy with nitrogen radical doping. Active nitrogens responsible for doping are N 2 metastables in the A 3Σ + u state. The free-hole concentration of N-doped ZnSe is of the order of 10 17 cm −3 at room temperature. Laser diode action has been observed from ZnCdSe single quantum well structures grown on GaAs substrates without GaAs buffer layers. Coherent light was observed at 490–520 nm at 77 K. The minimum threshold current density was as low as 160 A/cm 2 under pulsed operation.
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