Abstract
The improvement in UV photoconductor device performance has been significantly realized by comprising the ZnS based nano/micro-structures. In the present work, a simple one-step hydrothermal technique has been implied to synthesize the ZnS based microspheres, and it has been utilized for the UV photoconductor device applications. FESEM analysis revealed that as-synthesized ZnS possesses the shape of a microsphere with nanosheets on its surface. The size of the microspheres and the thickness of the nanosheets is found to be ~1.5 (±0.3) µm and ~22 (±3) nm, respectively. The current-voltage (I-V) and current-time (I-T) measurements have been carried out under different UV light exposures, and various photoconductor performance parameters have been investigated systematically. The sensitivity and on/off ratio are estimated to be 0.21–0.35 and 1.21–1.35, respectively. However, responsivity and detectivity are found to be 2.74 × 10−4–8.94 × 10−5 A/W and 2.02 × 109–6.51 × 108 Jones, respectively. Improved responsivity and detectivity along with the faster rise/fall time (0.153/0.206 sec) are associated to higher active surface area and porosity that provided a higher number of active sites for charge carrier generations under UV light exposure.
Published Version
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