Abstract
We investigated zinc oxide (ZnO) thin films prepared by plasma-assisted atomic layer deposition (PA-ALD), and thin film transistors (TFTs) with the ALD ZnO channel layer for application to next-generation displays. The dependences of the electrical characteristics of the fabricated TFTs on the plasma condition were evaluated. The plasma injection time dependence of the transfer characteristics, the refractive index, and the impurity concentration revealed that insufficient oxidation degrades the performance of ZnO TFTs. On the basis of the experimental results, high-performance ZnO TFTs can be obtained by PA-ALD at a low temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
