ZnO Schottky diodes with iridium contact electrodes

Abstract

Schottky diodes with iridium (Ir) contact electrodes on ZnO films were fabricated and characterized in this work. The Schottky barrier height between Ir and ZnO was determined to be 0.824 ± 0.04%, 0.837 ± 0.04% and 0.924 ± 0.04% eV by the thermionic emission model, the Norde model and capacitance–voltage measurement, respectively. It was also found that the ideality factor of the fabricated ZnO-based Schottky diode was 1.68.