On the temperature dependence of the current conduction mode in non-homogeneous Pt/n-GaN Schottky barrier diode

Abstract

Forward current-voltage (I–V) measurements of Pt/n-GaN Schottky barrier diode (SBD) are investigated in a wide temperature range (80–400 K). The temperature dependence of the effective Schottky barrier height (SBH) and ideality factor are analyzed on the basis of the thermionic emission (TE) model by considering a double Gaussian distribution (DGD) of SBH due to the presence of barrier height inhomogeneities at the Pt/n-GaN interface. In the high temperature (HT) region (200–400 K), Pt/n-GaN SBD exhibits nearly an ideal behavior in accordance with the TE conduction mode. The obtained values of the homogeneous SBH Φ‾0bn = 1.33 eV and Richardson constant AHT* = 26.86 A cm−2 K−2are in agreement with the theoretical values for n-type GaN. In the low temperature (LT) region (80–160 K), the corresponding values Φ‾0bn = 0.94 eV and ALT* = 14.74 A cm−2 K−2 deduced within the TE mode deviate strongly from the ideal behavior. This deviation is further confirmed by the large ideality factor. In this work, we provide a strong evidence that the tunneling current including thermionic field emission (TFE) largely dominates the conduction mode at low temperature.