Abstract
We studied p-type capacitance characteristics of ZnO thin-film transistors (TFT’s), grown by metal organic chemical vapor deposition (MOCVD). We compared two ZnO TFT’s: one grown at 450℃ and the other grown at 350℃. ZnO grown at 450℃ showed smooth capacitance profile with electron density of 1.5 × 10<SUP>20</SUP> cm<SUP>-3</SUP>. In contrast, ZnO grown at 350℃ showed a capacitance jump when gate voltage was changed to negative voltages. Current-voltage characteristics measured in the two samples did not show much difference. We explain that the capacitance jump is related to p-type ZnO layer formed at the SiO<SUB>2</SUB> interface. Current-voltage and capacitance-voltage data support that p-type characteristics are observed only when background electron density is very low.
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