ZnO nanowire network transistors based on a self-assembly method

Abstract

Dense, uniform ZnO nanowire (NW) networks are prepared by using a simple and sufficient self-assembly method. In this method, ZnO NWs are modified with aminopropyltriethoxysilane (APTES) to form positively charged amine-terminated surfaces. The modified ZnO NWs are adsorbed on negatively charged SiO2/Si substrates to form ZnO NW networks by the electrostatic interaction in an aqueous solution. Field-effect transistors (FETs) are fabricated and studied based on the ZnO NW networks. For a typical device with an NW density of 2.8 μm−2, it exhibits a current on/off ratio of 2.4 × 105, a transconductance of 336 nS, and a field-effect mobility of 27.4cm2/(V·s).