Abstract
We present the growth of ZnO nanostructures on indium-doped ZnO film on a non-conductive glass substrate. The indium-doped ZnO film was used as the transparent conductive layer replaces the ITO layer. Various indium doping concentrations can change the electrical properties of ZnO film. The reduced electrical resistivity was investigated from 16.60×10−2 to 10×10−2Ωcm. after doping with the optimal concentration of 2wt% indium. It is found that the characteristic of ZnO nanostructures was strongly affected with indium doping concentration in ZnO films. The overall structural characteristics of ZnO ranged from 100–500nm in size and 7–10μm in length and the branch-like structures can be revealed from the 2wt% indium-doped ZnO film. The room-temperature photoluminescence spectra show a sharp ultraviolet band of 353nm, indicated to the ZnO nanorods structure. The branch-like structures on the 2wt% indium-doped film can be yielded the photovoltaic properties with a short-circuit current density of 3.96mA/cm2, an open-circuit voltage of 0.72V, a fill factor of 20% and an overall power conversion efficiency of 0.56% under irradiance of 100mW/cm2 (AM 1.5G).
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