Abstract
AbstractZnO nanorods were grown on a ‐, c ‐ and r ‐plane sapphire substrates using aqueous solution with microwave irradiation heating. ZnO nanorods about 200 nm diameter with c‐axis orientation were grown independently on the orientation of the substrates. Photoluminescence (PL) spectrum at 6 K showed a dominant peak at 3.3609 eV (I6) with the width as narrow as 2.2 meV comparable to that of epitaxially grown single‐crystalline ZnO films. The PL properties were improved by thermal annealing process without generating structural defects. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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