Abstract
AbstractStructural and photoluminescence (PL) properties of ZnO films grown by atmospheric pressure CVD methods using the sources of Zn(C5H7O2)2H2O (ZnAA) ‐C2H5OH, ZnCl2‐C2H5OH and Zn‐H2O, were compared. For the ZnAA‐C2H5OH system, the influence of the crystalline imperfection was observed on the XRD pattern and the PL spectrum. RT PL spectrum of the highly c‐axis oriented film grown on the a ‐plane sapphire substrate using ZnCl2‐C2H5OH system exhibited a strong green band (GB) emission and a weak near‐band‐edge (NBE) emission. For the Zn‐H2O systems, the c ‐ and a‐axis oriented films were successfully grown on the c ‐ and r ‐plane sapphire substrates, respectively, and their PL spectra were dominated by the NBE emission. For the ZnCl2‐C2H5OH system, only the variation of the PL intensity ratio of the GB emission to the NBE emission by changing the supply ratio of C2H5OH to ZnCl2 was observed. For the Zn‐H2O system, however, the visible region PL changed from the red to the GB emission systematically by adjusting the supply ratio of H2O to Zn. The Zn‐H2O system was found to be the most suitable for the defect control. Low temperature PL measurements revealed that the accurate control of the supply ratio of the O source to the Zn source is an important factor for controlling not only the defects, but also for the concentration of the residual impurities. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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