Abstract
The distribution profiles of the dopant in the surface layer of a SiO2/Si structure implanted with Zn and O ions are studied via Rutherford backscattering spectroscopy for He2+ ions using the channeling technique. The redistribution of implanted impurities in the Si surface layer during the formation process of zinc oxide (ZnO) nanoparticles is analyzed. The effect of the annealing temperature on the formation process and growth of ZnO nanoparticles is studied. The sample-surface morphology is examined via atomic force microscopy. The optical absorption and photoluminescence of the implanted layers are studied.
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