ZnO nanofiller concentrations modified P(VDF-HFP)/PEO polymer matrix-based nanocomposites of enhanced optical and dielectric properties for emerging optoelectronic and energy storage devices

Abstract

Wide bandgap metal oxide nanoparticles incorporated polymer blend matrix-based polymer nanocomposites (PNCs) are established as innovative multifunctional and properties tunable materials in the dimensional design and fabrication of promising performance extensive flexible type advanced devices. For further progress in these materials, herein, the detailed structural and promising properties of solution-cast prepared ternary PNC films, composed of poly(vinylidene fluoride-co-hexafluoropropylene) P(VDF-HFP)/ poly(ethylene oxide) PEO (50/50 wt%) host matrix and zinc oxide (ZnO) nanofiller (0, 1, 2, 5, and 10 wt%), are characterized. A sequence of employed experimental techniques, namely SEM, XRD, FTIR, and DSC, confirm that the surface morphology, polymorphic crystallographic character, polymer-polymer interactions, polymer-nanoparticle interfaces, crystalline phase thermal transitions, and degree of crystallinity of these PNCs largely affected with varying nanofiller concentrations. The optical study conducted with a UV–Vis spectrophotometer revealed high photo sensing and UV shielding characteristics with an energy bandgap of about 3.0 eV, demonstrating widespread applications of these semiconducting PNC materials in emerging optoelectronic device technologies. The broadband dielectric spectroscopic (BDS) characterization over the 20 Hz–1 GHz range explained harmonic field frequency and nanofiller concentration tunable dielectric permittivity (about 3 to 13) with low losses and multiple relaxation processes, predominantly ruled by microstructural interfaces and interactions developed in these ternary hybrid complex materials. The meaningful broadband dielectric characteristics of P(VDF-HFP)/PEO/ZnO materials demonstrated that they could be used as innovative nanodielectrics for energy storage purposes in capacitive devices, and flexible dielectric substrate and insulators for the fabrication of frequency-adjustable discrete and integrated microelectronic devices.