Abstract
ZnO epitaxial films were grown on sapphire substrates by molecular beam epitaxy. Schottky diodes and metal–semiconductor–metal (MSM) photodetectors with ruthenium (Ru) electrodes were also fabricated. It was found that Schottky barrier height at the Ru/ZnO interface was 0.76 eV. It was also found that we achieved a photocurrent to dark current contrast ratio of 225 from our ZnO MSM photodetectors. Furthermore, it was found that the time constant of our photodetectors was 13 ms with three-order decay exponential function.
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