Abstract
A ZnO infiltration technology was developed by chemical deposition from solution into a three-dimensional opal lattice; samples of the ZnO–opal composites were prepared with the predominating UV emission at room temperature. It is shown that the use of 'raw' opals and an incomplete filling of pores by semiconducting material increase the edge excitonic emission several-fold at room temperature. Angular dependences of the photoluminescence and reflectance spectra of the ZnO-infiltrated opal are studied. The suppression effect of the spontaneous emission in the stop band is observed. These results can be used to create effective laser light sources in the UV spectral range using the 'photonic crystal' effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
