Abstract
Zinc oxide and germanium multilayer films have been deposited on glass substrate using electron beam evaporation and resistive heating system, respectively, for alternate layers. The structural optical and electrical parameters have been investigated for the deposited films. The layer formation was confirmed by employing Rutherford back-scattering technique. Optical properties exhibit quantum confinement effect by showing the separate band gaps for ZnO and Ge. Electrical conductivity increases due to combined effect of all six layers (six alternate layers of Ge and ZnO).
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