Abstract
Zinc oxide films of optical quality are obtained on single-crystal ZnSe substrates by the developed method of photoelectrothermal oxidation. Comparative analysis of the structure and mechanical and electrical characteristics of the films, obtained by the methods of photothermal and photoelectrothermal oxidation, is performed. It is shown that photoelectrothermal oxidation makes it possible to fabricate highly textured ZnO films of large thickness at much lower temperatures. Such films are characterized by high adhesion with the surface of the crystalline substrate and a high mechanical strength. On the basis of the thermostable ZnO films and oxide-semiconductor heterostructures prepared by photoelectrothermal and photothermal oxidation, varistors, gas analyzers, light converters, and multifunctional IR optical elements are designed.
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