Abstract
ZnGa2O4 thin film phosphors have been synthesized on ITO coated glass and soda-lime glass at a firing temperature of 500∘C and an annealing temperature of 500∘C and 600∘C via a chemical solution method using Zinc acetate dihydrate, Gallium nitrate hydrate and 2-methoxiethanol as a solution. XRD patterns of the film phosphors synthesized showed the peaks of ZnGa2O4 crystalline phases. AFM surface morphologies of the ZnGa2O4 thin film phosphors revealed marked differences according to an annealing temperature of 500∘C and 600∘C under an annealing atmosphere (3% H2/Ar). On the other hand, the sheet resistance of ZnGa2O4 thin film phosphors, which were measured by four-point probe instrument, was approximately 5.76 Ω /square and 7.86 Ω /square with annealing temperature, respectively. The ZnGa2O4 thin film phosphors exhibited blue emission spectra with peak wavelength of 434 nm and 436 nm by ultra-violet excitation around 230 nm.
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