Abstract
Zinc gallate (ZnGa2O4) thin films were grown on sapphire (0001) substrate using radio frequency (RF) magnetron sputtering. After the thin film deposition process, the grown ZnGa2O4 was annealed at a temperature ranging from 500 to 900 °C at atmospheric conditions. The average crystallite size of the grown ZnGa2O4 thin films increased from 11.94 to 27.05 nm as the annealing temperature rose from 500 to 900 °C. Excess Ga released from ZnGa2O4 during thermal annealing treatment resulted in the appearance of a Ga2O3 phase. High-resolution transmission electron microscope image analysis revealed that the preferential crystallographic orientation of the well-arranged, quasi-single-crystalline ZnGa2O4 (111) plane lattice fringes were formed after the thermal annealing process. The effect of crystallite sizes and lattice strain on the width of the X-ray diffraction peak of the annealed ZnGa2O4 thin films were investigated using Williamson-Hall analysis. The results indicate that the crystalline quality of the deposited ZnGa2O4 thin film improved at higher annealing temperatures.
Highlights
Zinc gallate (ZnGa2 O4 ) belongs to a group of close-packed, face-centered cubic structured compounds (AB2 O4 ) with a normal oxide spinel structure
The ZnGa2 O4 thin films were deposited over a C-plane sapphire using the radio frequency (RF) magnetron sputtering technique
The intensity of the diffraction peak (311) plane increased with an increase in the annealing temperature
Summary
Zinc gallate (ZnGa2 O4 ) belongs to a group of close-packed, face-centered cubic structured compounds (AB2 O4 ) with a normal oxide spinel structure (space group of Fd3m). ZnGa2 O4 materials have recently gained increased attention [2,3]. Researchers have discussed many one-dimensional (1D) ZnGa2 O4 nanostructures (nanoparticles, nanocrystal, nanowires, and nanotube) over the years [7,8,9]. These 1D ZnGa2 O4 devices exhibit high optoelectronic performance, the reliability and stability of these devices are a critical aspect of their application, which raises concern [10,11]. It is important to develop and perfect ZnGa2 O4 film materials and related optoelectronic devices
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