Zn (O,S):Al Films Prepared by Radio Frequency Magnetron Sputtering for Transparent Electrode

Abstract

Zn (O,S):Al (AZOS) has been proposed as a new type of transparent conductive oxide (TCO) with adjustable band gap energy (Eg) and conduction band position. The novel materials of AZOS with S/(S+O) ratio of 0.00~0.85 were prepared by radio frequency magnetron co-sputtering of ZnO:Al and ZnS targets. The optical properties of the films showed high transmittance of almost over 80% and Eg change with the S/(S+O) ratio. The suitable resistivity for TCO of around 10-3 Ωcm was obtained at the S/(S+O) ratio of 0.00~0.09, but as the S/(S+O) ratio exceeded 0.40, the resistance increased greatly.