Abstract
Zinc sulphide thin films doped with trivalent rare earths (cerium, europium, terbium, thulium) have been grown by the atomic layer epitaxy (ALE) method using hydrogen sulphide and zinc chloride or acetate as starting materials and rare earth β-diketonates as dopants. The films were characterized by X-ray diffraction and X-ray fluorescence techniques and their photoluminescence was studied. It is possible by ALE to grow thin films of good quality and to control the distribution of the rare earth ions in the ZnS matrix. The most intense luminescence was obtained with Ce 3+ and Tb 3+. Europium also gave a distinct luminescence while that of thulium remained poor. The band gap of ZnS was apparent in the excitation spectra and its energy depended on the crystal structure of the zinc sulphide thin film (cubic or hexagonal).
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