Abstract
ZnO nanorod and nanowire films were fabricated on the Si substrates with comb type Pt electrodes by the vapor-phase transport method, and their humidity sensitive characteristics have been investigated. These nanomaterial films show high-humidity sensitivity, good long-term stability and fast response time. It was found that the resistance of the films decreases with increasing relative humidity (RH). At room temperature (RT), resistance changes of more than four and two orders of magnitude were observed when ZnO nanowire and nanorod devices were exposed, respectively, to a moisture pulse of 97% relative humidity. It appears that the ZnO nanomaterial films can be used as efficient humidity sensors.
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