Abstract
We report the influence of zigzag-shaped quantum well in green GaN-based light-emitting diode. Our analysis shows that the droop onset, efficiency droop, internal quantum efficiency, light output power and radiative recombination rate is significantly improved due to strong hole confinement in the indium regions in the proposed quantum well. • Utilizing bandgap-engineering to improve the internal quantum efficiency of GaN-based LEDs is of keen interest to the community. • In this work, we propose a zig-zag-shaped engineered quantum well to improve the device performance of GaN-based green light-emitting diodes. • Detailed comparison of optoelectronic properties of the reference and our proposed GaN-based light-emitting diodes has been presented. • We believe that our proposed design may substantially improve the device performance, especially in the green emission range.
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