Abstract
Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (fc), is about 10 THz for sub-μm2 switches with favorable scaling that can afford fc above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.
Highlights
IntroductionNon-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices
Non-volatile resistance switching or memristor effect was discovered in transitional metal dichalcogenides (TMD) vertical devices
resistive randomaccess memory (RRAM) devices are typically realized with amorphous transitional metal oxides that have LRS values >1 kΩ, making them unsuitable for RF switching due to system requirements for RON to be much
Summary
Non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. For the purpose of improving energy efficiency, non-volatile switches are attractive because they require no hold voltage for operation and, as a benefit, consume zero-static power Toward this end, non-volatile memory devices such as resistive randomaccess memory (RRAM) and phase-change memory (PCM) have been recently considered for RF switch applications. MoS2 RF switches are straightforward to realize with no need for a heater (Fig. 1), are programmable with a voltage around 1 V, afford fast switching times similar to ion transport in RRAM, and enjoy favorable scaling with area (A) for higher frequency capability With regards to the latter, RF circuits for wideband or high frequency operation require an RF switch with low ON-state resistance and low OFF-state capacitance (COFF) to obtain a high cutoff frequency FOM, fc = 1/2πRONCOFF. An area-normalized FOM of ~1 THz-μm[2] has been realized with promising prospects for fc >100 THz for device dimensions
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