Zero-mismatch temperature synthesis of NiSi2 by a metal vapor vacuum arc ion source

Abstract

Abstract NiSi2 surface layers were synthesized by implantation of Ni into Si (1 1 1) substrates at the zero-mismatch temperature with a metal vapor vacuum arc source. X-ray diffraction patterns showed that these layers had a strong (1 1 1) preferred orientation. Rutherford back scattering/channeling spectrometry was performed to evaluate the quality of the NiSi2 layers. The concept of “ion existential model” has been employed to explain the ratio of the amount of Ni and that of Si. Four-point probe measurement showed that a higher implantation dose is better to synthesize a high quality NiSi2 layer.