Zero infrared reflectance anomaly in doped silicon lamellar gratings. II. Electric field amplitude distributions across the grating profile

Abstract

Spatial (in-depth by lateral) electric field amplitude distributions in zero-reflectance binary lamellar gratings in increasingly doped n-Si irradiated by a normally incident TE-polarized plane electromagnetic wave of wavelength 10.6 μm are studied. It is shown that the maximum of electric field amplitude in these gratings is enhanced over the incident field value both for dielectric- and metallic-like cases. For zero-reflectance the maximum of the electric field amplitude is located deep inside the grating line for dielectric-like Si, and deep inside the grating groove for metallic-like Si. In the latter case for non-zero reflectance the maximum of the electric field amplitude is located at the top surface of the grating.