Abstract
A new numerical method for multiband effective-mass calculations of electron states in n-inversion layers is presented. This method allows to consider the resonant character of subband states in narrow-gap semiconductors due to Zener tunnelling and is not restricted to simplified versions of the k · p Hamiltonian. Results obtained for n-inversion layers on Hg 0.8Cd 0.2Te from a 8 × 8 k · p Hamiltonian demonstrate that Zener-tunnelling results in shifts of the subband energies, which need to be considered in a self-consistent calculation.
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