Abstract
We show the atomic structure of buried CoSi2/Si(001) boundaries involves a 2×1 ordering of the interfacial Co atoms. The ability to directly image and interpret this unforeseen structure is possible through the Z-contrast technique, and presents a new level of insight into the important and controversial relationship between the atomic structure and electronic properties, such as the energy barrier for electron transport across metal-semiconductor interfaces.The buried CoSi2 layer was produced by implanting Co+ ions (200 keV, 2 × 1017 ions/cm2) in a Si(001) substrate heated to 350°C. The substrate was capped with 200 nm of SiO2 and then given a two-step anneal in high purity argon (750°C for 30 s + 1150°C for 10 s). This treatment results in a continuous buried CoSi2 layer ~70 nm thick, ~90 nm below the substrate surface. The layer and the substrate are oriented such that the cubic CaF2 unit cell of CoSi2 is aligned parallel to the cubic unit cell of Si.
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