Abstract
Alloying amorphous GeO2 with Y2O3 has been found experimentally to improve its chemical stability and electrical reliability as a gate dielectric in Ge-based field effect transistors. The mechanism is explained here based on density functional calculations. The GeO2 reliability problem is correlated with oxygen deficiency defects, which generate gap states near the band-edges of the underlying Ge. These can be passivated through Y doping. This shifts the defect gap state out of the gap up into the GeO2 conduction band, thus effectively passivating gap states in the GeO2 layer.
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