Abstract
ABSTRACTTransmission electron microscopy (TEM) studies of dislocation structures in single crystals of TiAl containing 54.5 or 54.7 at% Al deformed at different temperatures revealed the occurrence of slip on ½〈112]{ {111} at room temperature and near the peak of the yield stress anomaly (YSA). Measurements of the corresponding yield stresses revealed the existence of a YSA for this type of slip. Weak-beam TEM showed the presence of locks at room temperature for 30° dislocations and at high temperatures for edge dislocations. Both types of locks involve dissociation on two intersecting { 1111} type planes, driven by reduction in elastic strain energy. The edge dislocation dissociation at high temperatures involves both climb and glide.
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