Abstract
The respective transfer characteristics of the ultrathin body (UTB) and gate recessed channel (GRC) device, sharing sameW/Lratio but having a channel thickness of 46 nm, and 2.2 nm respectively, were measured at 300 K and at 77 K. By decreasing the temperature we found that the electrical behaviors of these devices were radically opposite: if for UTB device, the conductivity was increased, the opposite effect was observed for GRC. The low field electron mobility and series resistanceRSDvalues were extracted using a method based onY-function for both the temperatures. IfRSDlow values were found for UTB, very high values (>1 MΩ) were extracted for GRC. Surprisingly, for the last device, the effective field mobility is found very low (<1 cm2/Vs) and is decreasing by lowering the temperature. After having discussed the limits of this analysis.This case study illustrates the advantage of theY-analysis in discriminating a parameter of great relevance for nanoscale devices and gives a coherent interpretation of an anomalous electrical behavior.
Highlights
The Y-method for parameters’ extraction which was first published more than two decades ago [1] had for purpose to isolate the source/drain series resistance (RSD = RS + RD) influence from the intrinsic channel mobility factor
We present the influence and behavior of series resistance at low temperature for fully depleted (FD)-SOI MOSFETs by comparing between ultrathin body (UTB) and gate recessed channel (GRC) devices
In [34], the ΔVT/ΔT slope of FD was found lower than the partially depleted (PD) on the channel thickness, meaning that for thinner channel the VT is less sensitive to temperature as seen for our GRC device
Summary
It was improved to overcome the difficulties encountered by applying the conventional techniques [4] and was applied to more complex devices having an architecture of nanoscale double-gate transistors [5] and fully depleted SOI MOSFETs with high-k and metal gate [6] and to devices in saturation regime [7]. This smart technique permits the extraction of the gate voltage dependence of the series resistance [8]. This study comes to complete our previous works where we first evidenced the gate dependence of the series resistance (RSD) in this device, using classic I-V modeling [26] and Rm-L and C-V techniques [27,28,29], and used the Y-function method for parameters’ extraction [30] for room temperature results
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