Low field electron mobility in 6H-SiC

Abstract

Experimental and theoretical studies of temperature and doping dependencies of electron mobility in 6H-SiC are reported. Low field electron mobility has been calculated by iterative technique and compared with experimental data. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic phonon, and intervalley optical phonon are included in the calculation. Ionized and neutral impurity scattering have been treated beyond the Born approximation using a phase-shift analysis. We have found that neutral impurity scattering is very important in 6H-SiC due to large donor activation energy. Acceptor concentration is used as a parameter for fitting experimental data. Comparisons with published as well as our experimental data confirm the present calculation over a wide range of temperatures and electron concentrations.