Abstract
SUMMARY Silicon point contact rectifiers have been subjected to groups of narrow voltage pulses, produced by the discharge of a small condenser. When the pulse energy exceeds a critical value, the reverse current/voltage characteristics of the rectifiers exhibit marked discontinuities. At the same time, a significant drop in the rectification efficiency and an increase in the noise output occurs. A. tentative explanation is put forward in terms of the formation of minority carrier traps in the silicon lattice.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
