Abstract

A simple and robust tool for spatio-temporal overlap of THz and XUV pulses in in-vacuum pump-probe experiments is presented. The technique exploits ultrafast changes of the optical properties in semiconductors (i.e. silicon) driven by ultrashort XUV pulses that are probed by THz pulses. This work demonstrates that this tool can be used for a large range of XUV fluences that are significantly lower than when probing by visible and near-infrared pulses. This tool is mainly targeted at emerging X-ray free-electron laser facilities, but can be utilized also at table-top high-harmonics sources.

Highlights

  • Intense THz pulses combined with synchronized X-ray pulses enable investigation of the dynamics of the light–matter interaction, non-linear response of materials and control of the properties of matter selectively on femtosecond time scales

  • In this work we present a technique to establish the temporal overlap between XUV and THz pulses, based on the transient change of optical properties of a silicon target in the THz spectral range, induced by the intense femtosecond XUV pulse

  • The presented method can be applied in facilities employing THz radiation for time-resolved XUV–THz pump–probe experiments where it is necessary to temporally overlap XUV and THz pulses on a sub-picosecond level

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Summary

Introduction

Intense THz pulses combined with synchronized X-ray pulses enable investigation of the dynamics of the light–matter interaction, non-linear response of materials and control of the properties of matter selectively on femtosecond time scales. The so-called plasma-switch, the transient change of optical constants in the visible (VIS) and near-infrared (NIR) spectral ranges by X-ray and XUV pulses, has been used for the temporal characterization of these pulses (Harmand et al, 2012; Gahl et al, 2008; Krupin et al, 2012; Riedel et al, 2013; Danailov et al, 2014). In this work we present a technique to establish the temporal overlap between XUV and THz pulses, based on the transient change of optical properties of a silicon target in the THz spectral range, induced by the intense femtosecond XUV pulse. The presented method can be applied in facilities employing THz radiation for time-resolved XUV–THz pump–probe experiments where it is necessary to temporally overlap XUV and THz pulses on a sub-picosecond level

XUV driven THz plasma switch: theoretical background
Description of the setup
THz and XUV 2D beam profile
Transient reflectivity and transmission
XUV þ Á2jitter þ
Dependence on the XUV fluence
Summary
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