X-ray photoelectron and infrared spectroscopies of Cu-implanted silica and borosilicate glasses

Abstract

Fourier transform infrared (FTIR) spectra and x-ray photoelectron spectra (XPS) were acquired from Cu implanted in fused silica and a borosilicate glass. The FTIR spectra indicate that Cu ion implantation in the silica and borosilicate glasses results in an intensity decrease in the Si–O stretching vibration. The Si–O stretching vibration of the implanted glass is redshifted by 20 cm−1 with respect to the virgin glass. The redshift is attributed to a decrease in the Si–O–Si bridge angle. A shoulder appearing on the low frequency side of the Si–O stretching vibration observed only in the implanted glasses is attributed to Si–O dangling bonds. The XPS depth profiles revealed that the fused silica sample was depleted in oxygen by as much as 20% at a depth of 18 nm, while the borosilicate glass at a depth of 200 nm is depleted in boron by as much as 37%. Deconvolution of the O(1s) peak reveals two components located at 532.7 and 534.3 eV for silica and the borosilicate glasses. The lower binding energy peak is attributed to the binding energy for O(1s) electron in silica, while the higher energy peak is attributed to a peroxy related defect.