Abstract
Summary form only given. The powerful capabilities of Lang transmission X-ray topography (XRT) in characterizing the crystallographic perfection of the substrate silicon and the top of superficial silicon layer in separation by implantation of oxygen (SIMOX) wafers is discussed. Moire patterns formed by the two superimposed lattices of substrate silicon and top silicon layer in SIMOX wafers have been imaged under a variety of diffraction conditions and used to provide an extensive evaluation of the SIMOX process conditions. >
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