X-ray integrated intensities from semiconductor substrates and epitaxic layers – a comparison of kinematical and dynamical theories with experiment

Abstract

X-ray integrated intensities have been collected from extended-face specimens as a function of azimuthal angle ψ (rotation angle about the scattering vector) with a four-circle diffractometer for a number of semiconductor substrate materials and epitaxic layers. The Bragg reflections (and X-ray wavelengths) have been chosen so that as wide a range of asymmetry as possible is encompassed. It is shown that the interpretation of these results, in terms of kinematical and perfect-crystal dynamical X-ray diffraction theories, provides a measure of the perfection of the crystal being investigated. The interpretation of some results requires consideration of extinction effects and their dependence on asymmetry. Such measurements, taken from epitaxic layers or substrates beneath epitaxic layers, can also be used to determine the layer thickness and/or identify the composition of a layer.