Abstract

GaAlAs/GaAs hetero-epitaxial thin films are prepared by liquid phase epitaxy (LPE) technique. Structural characteristic of the film was Studied by X-ray double crystal rocking curve method. We have measured the rocking curve of (400) reflection and observed the interference fringes. Computer simulation of the experimental curves have been performed with kinematical and dynamical diffraction theory, respectively. We discussed the reason for the appearance of the interference fringe, and calculated structure parameters. The results obtained using dynamical theory is closer to the actual growth parameters.

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