X-Ray Diffraction Patterns in High-Energy Proton Implanted Silicon

Abstract

Silicon crystals implanted with 1 and 1.6 MeV protons were studied by means of conventional source double-crystal and synchrotron multi-crystal arrangements. Both the rocking curves and series of topographs were recorded in different parallel settings employing different reflections and wavelengths of radiation. A comparison of rocking curves in different regions of implanted areas was performed in synchrotron multi-crystal arrangement with a beam of a very small diameter. The rocking curves exhibited subsidiary interference maxima with increasing periodicity on the low angle side. The plane wave topographs taken at different angular setting revealed characteristic fringes whose number decreased with increasing distance from the main maximum. The fringe pattern did not depend on the direction of the diffraction vector. The number of fringes for equivalent angular distance from the maximum was larger for higher order of reflection. The shape of the rocking curve and other diffraction patterns were reasonably explained assuming the lattice parameter change depth distribution proportional to the profile obtained from the Biersack-Ziegler theory and lateral non-uniformity of ion dose. A good approximation of the experimental results was obtained using numerical integration of the Takagi-Taupin equations.