Abstract
By employing the Reflection X-ray Topography (RXT), on one hand, and the cathodoluminescence (CL-IR) mode of operation of the Scanning Electron Microscope, on the other hand, we are able to visualize the lattice defects in CdTe sinole crystals. The possibility of defect identification is the advantage of the RXT technique. Moreover, the examitied surface can be imaged as a whole. Cathodoluminescence however, guarantees higher resolution. The defects in CdTe crystals, observed in cathodoluminescence images, have been identified as small-angle boundaries and screw dislocations.
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