Abstract
AbstractThe effect of DS(L) (Diluited Sirtl with or without Light) solution on CadmiumTelluride crystals has been studied in comparison with the actions due to Inoue and Nakagawa etching solutions. The use of chemical etching to reveal extended defects is a fast and useful technique for characterizing the crystals with the aim of improving the growth technology and better devices performance. In fact it is well known that extensive defects in CdTe crystals have a relevant role on the material properties and finally on the devices performance. DSL solution previously used on Si, GaAs and InP, here has been used for the first time on CdTe crystals. The etching solutions have been used to characterize crystals with two different characteristics: the first group shows high electrical resistivity and close to stoichiometry composition, the second one shows low resistivity behaviour and large Te deviation. We report here the preliminary results of the characterization of these crystals with the DSL etching. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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