Abstract
In order to investigate the Na gettering, PSG/<TEX>$SiO_2$</TEX>/Al-1%Si multilevel thin films were fabricated. DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition) were utilized for the deposition of Al-1%Si thin films and PSG/<TEX>$SiO_2$</TEX> passivations, respectively. Heat treatment was carried out at <TEX>$300^{\circ}C$</TEX> for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling and XPS (X-ray Photoelectron Spectroscopy) analysis were used to determine the distribution and binding energies of Na, Al, Si, O, P and other elements throughout the PSG/<TEX>$SiO_2$</TEX>/Al-1%Si multilevel thin films. Na peaks were mainly observed at the the PSG/<TEX>$SiO_2$</TEX> interface and at the <TEX>$SiO_2$</TEX>/Al-1%Si interfaces. Na impurity gettering in PSG/<TEX>$SiO_2$</TEX>/Al-1%Si multilevel thin films is considered to be caused by a segregation type of gettering. The chemical state of Si and O elements in PSG passivation appears to be <TEX>$SiO_2$</TEX>.
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